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Title: Epitaxial germanidation of full-Heusler Co{sub 2}FeGe alloy thin films formed by rapid thermal annealing

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3562042· OSTI ID:21560114
; ;  [1];  [2];  [3]
  1. Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)
  2. Department of Electrical Engineering and Information Systems, University of Tokyo, Tokyo 113-8656 (Japan)
  3. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)

The authors demonstrated that a full-Heusler Co{sub 2}FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100] parallel GOI[100], although the film slightly contained a non-epitaxial component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L2{sub 1} structure. Cross-sectional high-resolution transmission electron microscopy images of the film revealed that the film had dominant epitaxial and slight non-epitaxial components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the buried oxide layer of the SOI substrate without formation of any interfacial layer.

OSTI ID:
21560114
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3562042; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English