Thermal Lattice Expansion in Epitaxial SrTiO3(100) on Si(100)
Thermal lattice expansion in epitaxial SrTiO3(100) grown on Si(100) by molecular beam epitaxy was examined by in situ x-ray diffraction (XRD) at temperatures ranging from 25 C to 1000 C. The SrTiO3 layer thickness ({approx}400 ?) was determined a priori by ex situ x-ray reflectivity (XRR). In addition, the SrTiO3(100) film was further characterized before and after thermal treatment by Rutherford backscattering spectroscopy in channeling geometry (RBS/C) and transmission electron microscopy (TEM). The XRD results showed that the rate of thermal expansion in epitaxial SrTiO3 in the out-of-plane direction is approximately 1.5-2.0 times the bulk value. In addition, the SrTiO3 film was seen to relax after heating. RBS/C and TEM also revealed the formation of a thick ({approx}1000 ?), amorphous silica layer at the SrTiO3/Si interface. Interestingly, the SrTiO3 film retained its epitaxial form atop this non-templating surface while its crystalline quality improved with annealing. These results will be further discussed in the context of their potential application toward silicon-on-insulator (SOI) semiconductor architecture.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 895173
- Report Number(s):
- PNNL-SA-47577; KP1303000; TRN: US200702%%625
- Resource Relation:
- Conference: Advances in X-ray Analysis, proceedings of the 55th Annual Denver X-ray Conference, August 7-11, Denver Marriott Tech Center Hotel, Denver, Colorado, U.S.A. , 49:175-179
- Country of Publication:
- United States
- Language:
- English
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