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Title: Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4984311· OSTI ID:1465336

This paper presents the growth, structural characterization, and measurement of magnetic properties of Co2TiGe thin films grown by molecular beam epitaxy on insulating MgO (001) substrates and conductive lattice matched InAlAs/InGaAs/InAlAs epitaxial layers grown on n-InP (001) substrates. A GdAs diffusion barrier was used to minimize interfacial reactions during Co2TiGe growth on InAlAs. The surface morphology, structural quality, and magnetic behavior were examined by reflection high-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and superconducting quantum interference device magnetometry. The results reveal high quality Co2TiGe thin films with a saturation magnetization of ~1.8 μB/formula unit and a Curie temperature of ~375 K. Finally, the magnetic easy axis was found to lie in the [110] direction but magnetometry also reveals that there is only a small difference in energy between the [110] and [010] magnetization directions.

Research Organization:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
SC0014388; DMR 11–21053
OSTI ID:
1465336
Alternate ID(s):
OSTI ID: 1366557
Journal Information:
Journal of Applied Physics, Vol. 121, Issue 21; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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