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Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4984311· OSTI ID:1465336
 [1];  [2];  [2];  [2];  [3];  [2];  [3];  [4]
  1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.; University of California, Santa Barbara
  2. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
  3. Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering
  4. Univ. of California, Santa Barbara, CA (United States). Materials Dept. Dept. of Electrical and Computer Engineering
This paper presents the growth, structural characterization, and measurement of magnetic properties of Co2TiGe thin films grown by molecular beam epitaxy on insulating MgO (001) substrates and conductive lattice matched InAlAs/InGaAs/InAlAs epitaxial layers grown on n-InP (001) substrates. A GdAs diffusion barrier was used to minimize interfacial reactions during Co2TiGe growth on InAlAs. The surface morphology, structural quality, and magnetic behavior were examined by reflection high-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and superconducting quantum interference device magnetometry. The results reveal high quality Co2TiGe thin films with a saturation magnetization of ~1.8 μB/formula unit and a Curie temperature of ~375 K. Finally, the magnetic easy axis was found to lie in the [110] direction but magnetometry also reveals that there is only a small difference in energy between the [110] and [010] magnetization directions.
Research Organization:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Organization:
National Science Foundation (NSF) (United States); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0014388
OSTI ID:
1465336
Alternate ID(s):
OSTI ID: 1366557
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 121; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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