Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation

Journal Article · Wed Dec 29 04:00:00 EST 2010 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2010V040N11ABEH014443· OSTI ID:21541833

Bulgakov, A V; Evtushenko, A B; Shukhov, Yu G ^[1]; Ozerov, I; Marin, W ^[2]

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1. S S Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)
2. Universite de la Mediterranee, CINaM, UPR CNRS 3118, Marseille (France)

Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged Zn{sub n}O{sub m} and In{sub n}P{sub m} clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas In{sub n}P{sub m} particles are significantly enriched with indium. (photonics and nanotechnology)

• OSTI ID: 21541833
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 11 Vol. 40; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABLATION
CHALCOGENIDES
COMPARATIVE EVALUATIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
EVALUATION
INDIUM
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRRADIATION
LASER RADIATION
LASERS
MASS SPECTROSCOPY
MATERIALS
METALS
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
STOICHIOMETRY
TIME-OF-FLIGHT METHOD
ZINC COMPOUNDS
ZINC OXIDES