Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3507174· OSTI ID:21454850
; ;  [1]; ;  [2]
  1. Institute of Thermophysics SB RAS, Lavrentyev Ave. 1, 630090 Novosibirsk (Russian Federation)
  2. Universite de la Mediterranee, CINaM, UPR CNRS 3118, 13288 Marseille (France)

A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn{sub n}O{sub m} and In{sub n}P{sub m} particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In{sub 4}P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

OSTI ID:
21454850
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1278; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English