Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors
- Institute of Thermophysics SB RAS, Lavrentyev Ave. 1, 630090 Novosibirsk (Russian Federation)
- Universite de la Mediterranee, CINaM, UPR CNRS 3118, 13288 Marseille (France)
A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn{sub n}O{sub m} and In{sub n}P{sub m} particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In{sub 4}P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.
- OSTI ID:
- 21454850
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1278; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABLATION
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELEMENTS
EVAPORATION
EXPANSION
INDIUM
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRRADIATION
LASER RADIATION
MASS SPECTROSCOPY
MATERIALS
METALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PARTICLES
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PLASMA EXPANSION
PLUMES
PNICTIDES
PULSED IRRADIATION
RADIATIONS
SEMICONDUCTOR MATERIALS
SOLID CLUSTERS
SPECTROSCOPY
STOICHIOMETRY
TIME-OF-FLIGHT METHOD
ZINC COMPOUNDS
ZINC OXIDES