Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films
- Institute for Energy Technology, Department of Solar Energy, Instituttveien 18, 2008 Kjeller (Norway)
- SINTEF Materials and Chemistry, P.B 124 Blindern, N-0314 Oslo, Norway, and Centre for Material Science and Nanotechnology, University of Oslo (Norway)
The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). The films were deposited by dc magnetron sputtering on monocrystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO{sub x} was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO{sub x} interface layer thickness.
- OSTI ID:
- 21538405
- Journal Information:
- Journal of Applied Physics, Vol. 109, Issue 11; Other Information: DOI: 10.1063/1.3587174; (c) 2011 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CRYSTALLIZATION
DEPOSITION
HEAT TREATMENTS
INDIUM OXIDES
INSTABILITY
INTERFACES
LAYERS
MAGNETRONS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
THICKNESS
THIN FILMS
TIN OXIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
CHALCOGENIDES
DIMENSIONS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FILMS
INDIUM COMPOUNDS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHOTOELECTRON SPECTROSCOPY
SEMIMETALS
SILICON COMPOUNDS
SPECTROSCOPY
TIN COMPOUNDS