The influence of impurities and planar defects on the infrared properties of silicon carbide films

Journal Article · Mon May 09 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3585098· OSTI ID:21518429

Rajasekhara, S; Ferreira, P J; Kovar, D ^[1]; Neuner, III, B H; Shvets, G ^[2]; Zorman, C A ^[3]; Jegenyes, N; Ferro, G ^[4]

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1. Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712 (United States)
2. Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)
3. Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States)
4. LMI, UMR-CNRS 5615, Universite Claude Bernard Lyon 1, 69622 Villeurbanne (France)

Two cubic, single crystal silicon carbide (3C-SiC) films with similar thickness are shown to exhibit significantly different optical properties at mid-infrared wavelengths. Depth profiling by time-of-flight secondary ion mass spectroscopy indicates that these two films have substantially different n-type impurity concentrations that are responsible for the observed differences in optical absorption. The influence of impurities manifests as substantially different planar defect morphologies.

• OSTI ID: 21518429
• Journal Information: Applied Physics Letters, Vol. 98, Issue 19; Other Information: DOI: 10.1063/1.3585098; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ABSORPTION
CRYSTAL DEFECTS
DISTRIBUTION
IMPURITIES
INFRARED SPECTRA
ION MICROPROBE ANALYSIS
IONS
MASS SPECTRA
MASS SPECTROSCOPY
MONOCRYSTALS
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
THICKNESS
THIN FILMS
TIME-OF-FLIGHT METHOD
WAVELENGTHS
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CHEMICAL ANALYSIS
CRYSTAL STRUCTURE
CRYSTALS
DIMENSIONS
FILMS
MATERIALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SORPTION
SPECTRA
SPECTROSCOPY