Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

Journal Article · Sat Sep 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2776155· OSTI ID:21057544

Qijin, Cheng; Xu, S ^[1]

---

1. Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore) and Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)

Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X{<=}33%) in the gas mixture employed in our experiments.

• OSTI ID: 21057544
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
DILUTION
FOURIER TRANSFORM SPECTROMETERS
GASES
INFRARED SPECTRA
METHANE
NANOSTRUCTURES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILANES
SILICON CARBIDES
SYNTHESIS
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY