Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Journal Article · Fri Apr 15 00:00:00 EDT 2016 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.12.012· OSTI ID:22581498

Pawbake, Amit ^[1]; Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok ^[1]; Waman, Vaishali ^[2]; Parmar, Jayesh ^[3]; Bhattacharyya, Somnath ^[4]; Ma, Yuan‐Ron ^[5]; Devan, Rupesh; Pathan, Habib ^[6]; Jadkar, Sandesh ^[6]

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1. School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India)
2. Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India)
3. Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India)
4. Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India)
5. Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China)
6. Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

• OSTI ID: 22581498
• Journal Information: Materials Research Bulletin, Vol. 76; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
BORON
BORON HYDRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DOPED MATERIALS
ELECTRICAL PROPERTIES
FILMS
FOURIER TRANSFORMATION
GRAIN ORIENTATION
INFRARED SPECTRA
METHANE
NANOSTRUCTURES
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SILANES
SILICON CARBIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY