Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

Journal Article · Mon Jan 10 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3540688· OSTI ID:21518239

Heo, Junseok; Wei, Guo; Bhattacharya, Pallab ^[1]

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1. Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density ({approx}10{sup 8} cm{sup -2}) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at {lambda}=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of {approx}120 kW/cm{sup 2} and the spontaneous emission factor {beta} is estimated to be 0.08.

• OSTI ID: 21518239
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CATALYSTS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DENSITY
ELECTRON MICROSCOPY
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LASERS
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
POWER DENSITY
QUANTUM WELLS
QUANTUM WIRES
RESOLUTION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
TWO-DIMENSIONAL CALCULATIONS