Intrinsic polarization control in rectangular GaN nanowire lasers
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1240100
- Alternate ID(s):
- OSTI ID: 1370398
OSTI ID: 1371177
OSTI ID: 1387429
- Report Number(s):
- SAND2016-1212J; 619290
- Journal Information:
- Nanoscale, Journal Name: Nanoscale Journal Issue: 10 Vol. 8; ISSN NANOHL; ISSN 2040-3364
- Country of Publication:
- United States
- Language:
- English
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Intrinsic polarization control in rectangular GaN nanowire lasers
Intrinsic polarization control in rectangular GaN nanowire lasers