Intrinsic polarization control in rectangular GaN nanowire lasers

Li, Changyi; Liu, Sheng; Luk, Ting. S.; Figiel, Jeffrey J.; Brener, Igal; Brueck, S. R.  J.; Wang, George T.

doi:10.1039/c5nr07504a

Intrinsic polarization control in rectangular GaN nanowire lasers

Journal Article · Thu Dec 31 23:00:00 EST 2015 · Nanoscale

DOI:https://doi.org/10.1039/c5nr07504a· OSTI ID:1387429

Li, Changyi ^[1]; Liu, Sheng ^[2]; Luk, Ting. S. ^[2]; Figiel, Jeffrey J. ^[3]; Brener, Igal ^[2]; Brueck, S. R. J. ^[1]; Wang, George T. ^[3]

Center for High Technology Materials; University of New Mexico; Albuquerque, USA
Sandia National Laboratories; Albuquerque, USA; Center for Integrated Nanotechnology; Sandia National Laboratories; Albuquerque, USA
Sandia National Laboratories; Albuquerque, USA

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1387429

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 10 Vol. 8; ISSN NANOHL; ISSN 2040-3364

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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