Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

Journal Article · Mon Jun 16 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2944263· OSTI ID:21120820

Bejtka, K; Martin, R W ^[1]; Reveret, F; Vasson, A; Leymarie, J ^[2]; Edwards, P R ^[1]; Sellers, I R; Duboz, J Y; Leroux, M; Semond, F ^[3]

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1. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
2. LASMEA, UMR 6602 UBP/CNRS, 24 Avenue des Landais, F-63177 Aubiere Cedex (France)
3. CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France)

Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The {lambda}/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43{+-}2 meV and 56{+-}2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

• OSTI ID: 21120820
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRAGG REFLECTION
CRYSTAL GROWTH
DIELECTRIC MATERIALS
FILMS
GALLIUM NITRIDES
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
POLARONS
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SILICA
SILICON
SPECTRA
SUBSTRATES
TEMPERATURE RANGE 0000-0013 K
ZIRCONIUM OXIDES