Abnormal humidity-dependent electrical properties of amorphous carbon/silicon heterojunctions

Journal Article · Mon Nov 22 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3520493· OSTI ID:21518181

Xili, Gao; Xiaozhong, Zhang; Caihua, Wan; Xin, Zhang; Lihua, Wu; Xinyu, Tan ^[1]

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1. Department of Materials Science and Engineering, Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China) and National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084 (China)

Amorphous carbon (a-C) film/n-Si heterojunctions have been fabricated by pulse laser deposition, and their current-voltage characteristics have been investigated. The results show that the atmosphere relative humidity (RH) has a significant effect on the reverse bias I-V characteristics of the heterojunctions. For the low bias voltages, the resistance of the a-C/Si heterojunction decreases with the increase of the RH. However, when the applied voltage is greater than a threshold, the resistance of the a-C/Si heterojunctions increases with the increase of the RH. This humidity-dependent phenomenon is attributed to the charge transfer from the absorbed H{sub 2}O molecular to a-C film.

• OSTI ID: 21518181
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
AMORPHOUS STATE
ATMOSPHERES
CARBON
CHARGE EXCHANGE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY BEAM DEPOSITION
FILMS
HETEROJUNCTIONS
HUMIDITY
IRRADIATION
LASER RADIATION
MATERIALS
MOISTURE
N-TYPE CONDUCTORS
NONMETALS
PHYSICAL PROPERTIES
PULSED IRRADIATION
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SORPTION
SURFACE COATING
THIN FILMS