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Ammonia sensitivity of amorphous carbon film/silicon heterojunctions

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2790371· OSTI ID:21013622
; ; ; ;  [1]
  1. College of Physics Science and Technology, China University of Petroleum, Dongying, Shandong 257061 (China)
The amorphous carbon film/n-Si (a-C/Si) junctions have been fabricated by magnetron sputtering. The results show that these junctions have good rectifying properties and high ammonia (NH{sub 3}) gas sensitivity. For a given reverse bias voltage, the resistance of the junction can increase by 100 times rapidly when exposed to NH{sub 3} gas. This phenomenon may be attributed to the change of the space charge width of the junction, which is caused by the adsorption of NH{sub 3} gas molecules. This study shows that these a-C/Si junctions have potential application as NH{sub 3} gas detect sensors.
OSTI ID:
21013622
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 91; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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