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Title: Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3548372· OSTI ID:21510103
;  [1]; ;  [2];  [3]
  1. Department of Environmental Systems Engineering, Kochi University of Technology, Kami, Kochi 782-8502 (Japan)
  2. Research Institute for Nano-devices, Kochi University of Technology, Kami, Kochi 782-8502 (Japan)
  3. Department of Mechanical Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

ZnO wafers implanted with 60 keV Sn{sup +} ions at room temperature (RT) and at 110 K are investigated by means of X-ray diffraction (XRD) and photoluminescence (PL) techniques. The effect of implantation temperature is evident in the XRD and PL data. A yellow-orange (YO) band near 600 nm appears in the PL spectra of the ZnO wafers implanted to the doses of 4x10{sup 14} and 8x10{sup 14} ions/cm{sup 2} at RT. The intensity of this band increases and the peak position blue-shifts after illumination of the samples with the 325 nm line of a He-Cd laser. The PL data suggests that the CB (conduction band){yields}V{sub O}{sup +} and Zn{sub i}{sup +{yields}}V{sub Zn}{sup -} transitions contribute to the photoemission of the YO band.

OSTI ID:
21510103
Journal Information:
AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548372; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English