Characteristics of ZnO Wafers Implanted with 60 keV Sn{sup +} Ions at Room Temperature and at 110 K
- Department of Environmental Systems Engineering, Kochi University of Technology, Kami, Kochi 782-8502 (Japan)
- Research Institute for Nano-devices, Kochi University of Technology, Kami, Kochi 782-8502 (Japan)
- Department of Mechanical Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)
ZnO wafers implanted with 60 keV Sn{sup +} ions at room temperature (RT) and at 110 K are investigated by means of X-ray diffraction (XRD) and photoluminescence (PL) techniques. The effect of implantation temperature is evident in the XRD and PL data. A yellow-orange (YO) band near 600 nm appears in the PL spectra of the ZnO wafers implanted to the doses of 4x10{sup 14} and 8x10{sup 14} ions/cm{sup 2} at RT. The intensity of this band increases and the peak position blue-shifts after illumination of the samples with the 325 nm line of a He-Cd laser. The PL data suggests that the CB (conduction band){yields}V{sub O}{sup +} and Zn{sub i}{sup +{yields}}V{sub Zn}{sup -} transitions contribute to the photoemission of the YO band.
- OSTI ID:
- 21510103
- Journal Information:
- AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548372; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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SUPERCONDUCTIVITY AND SUPERFLUIDITY
ILLUMINANCE
ION IMPLANTATION
KEV RANGE 10-100
LASER RADIATION
PHOTOEMISSION
PHOTOLUMINESCENCE
SPECTRA
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TIN IONS
X-RAY DIFFRACTION
ZINC OXIDES
CHALCOGENIDES
CHARGED PARTICLES
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY RANGE
IONS
KEV RANGE
LUMINESCENCE
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
RADIATIONS
SCATTERING
SECONDARY EMISSION
TEMPERATURE RANGE
ZINC COMPOUNDS