As-doped p-type ZnO produced by an evaporation/sputtering process

Journal Article · Mon Nov 29 04:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1825615· OSTI ID:20634478

Look, D C; Renlund, G M; Burgener, II, R H; Sizelove, J R ^[1]

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1. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433 and Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States)

Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn{sub 3}As{sub 2} on a fused-quartz substrate at 350 deg. C; and (2) sputtering of ZnO with substrate held at 450 deg. C. The electrical characteristics include: resistivity of 0.4 {omega} cm, a mobility of 4 cm{sup 2}/V s, and a hole concentration of about 4x10{sup 18} cm{sup -3}. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5x10{sup 19} cm{sup -3}, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9x10{sup 19} cm{sup -3}. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply As{sub O} or the recently suggested As{sub Zn}-2V{sub Zn}.

• OSTI ID: 20634478
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EVAPORATION
HOLE MOBILITY
HOLES
IMPURITIES
MASS SPECTRA
PHOTOLUMINESCENCE
QUARTZ
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
VACUUM COATING
ZINC OXIDES