NEXAFS of pulsed laser deposited BN, CNx, and GaN films
- Lawrence Berkeley Lab., CA (United States); and others
NEXAFS is an synchrotron-based probe of empty electronic states with elemental specificity and sensitivity to both electronic structure and chemical bonding. This study focuses on NEXAFS characterization of thin nitride films which have novel mechanical or optical properties. Nitride films were prepared bi pulsed laser deposition under a variety of conditions, such as different nitrogen overpressures and substrate temperatures, and onto Si, MgO, and Al{sub 2}O{sub 3} substrates. Absorption spectra were collected at the K edges of B, C, and N by total election yield techniques Polarization studies have identified structural properties that have modified the electronic structures of the thin films. NEXAFS results from the nitride films reveal information which is not readily available from either techniques and distinguishes the microscopic differences between the films which will lead to improved film growth in the future.
- OSTI ID:
- 214989
- Report Number(s):
- CONF-950801--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of temperature on Ti and TiN films deposited on a BN substrate
Niobium nitride thin films deposition using radical beam assisted deposition