Niobium nitride thin films deposition using radical beam assisted deposition
Book
·
OSTI ID:375915
- Univ. of Connecticut, Storrs, CT (United States)
- Electrotechnical Lab., Tsukuba, Ibaraki (Japan). Applied Radiation Physics Section
The authors have employed a radical beam assisted deposition technique to prepare single-crystalline niobium nitride thin films on MgO (100) substrates. The radical beam containing excited species of nitrogen was produced by an ECR plasma source and used to irradiate the growing Nb film, which was simultaneously deposited by an electron-gun vapor source. The nitride film was found to grow epitaxially on the substrates heated to 600--650 C. It has resulted in the formation of NbN having predominantly B1 structure, resistivity of 44 {micro}{Omega}cm at 20 K, and almost equiatomic composition.
- OSTI ID:
- 375915
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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