On the evolution of film roughness during magnetron sputtering deposition

Journal Article · Mon Nov 15 04:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3506681· OSTI ID:21476617

Turkin, A A ^[1]; Pei, Y T; Shaha, K P; Chen, C Q; Vainshtein, D I

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1. Department of Applied Physics, Materials Innovation Institute M2i and Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands)

The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

• OSTI ID: 21476617
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANGULAR DISTRIBUTION
CONFIGURATION
CRYSTAL GROWTH
CYLINDRICAL CONFIGURATION
DEPOSITION
DIFFERENTIAL EQUATIONS
DIFFUSION
DIFFUSION EQUATIONS
DISTRIBUTION
EQUATIONS
FILMS
FREQUENCY RANGE
KHZ RANGE
MORPHOLOGY
PARTIAL DIFFERENTIAL EQUATIONS
RELAXATION
ROUGHNESS
SIMULATION
SPUTTERING
STOCHASTIC PROCESSES
SURFACE PROPERTIES
SURFACES
THIN FILMS