Interface Roughness Evolution in Sputtered WSi2/Si Multilayers

Journal Article · Mon Jan 01 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2422713· OSTI ID:930624

Wang, Y; Zhou, H; Zhou, L; Headrick, R; Macrander, A; Ozcan, A

We report on the growth of WSi{sub 2} and Si amorphous thin films by dc magnetron sputtering. In situ synchrotron x-ray scattering with high temporal resolution has been employed to probe the surface and interface roughness during film deposition. It is found that the WSi{sub 2}/Si multilayer surface alternately roughens and smoothes during deposition; while the Si layer roughness monotonically, the WSi{sub 2} layer is observed to smooth out when deposited on an initially rough surface. Subsequent deposition of the next layer effectively freezes in the surface morphology of the previous layer in each case. Energetic neutrals and ions assisting the growth may play a role in inducing this pronounced alternating pattern in the roughness.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 930624
• Report Number(s): BNL--80963-2008-JA
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
DEPOSITION
MAGNETRONS
MORPHOLOGY
PROBES
RESOLUTION
ROUGHNESS
SCATTERING
SILICON
SPUTTERING
SYNCHROTRONS
THIN FILMS
national synchrotron light source