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Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3474989· OSTI ID:21476416
; ; ;  [1]
  1. Institute of Physics, Technical University of Chemnitz, D-09107 Chemnitz (Germany)

The deposition of hydrogenated amorphous carbon (a-C:H) as well as hydrogenated amorphous silicon carbonitride (SiCN:H) films was investigated in view of a simultaneous realization of a minimum Young's modulus (>70 GPa), a high electrical insulation ({>=}1 MV/cm), a low permittivity and the uniform coverage of microcavities with submillimeter dimensions. For the a-C:H deposition the precursors methane (CH{sub 4}) and acetylene (C{sub 2}H{sub 2}) were used, while SiCN:H films were deposited from mixtures of trimethylsilane [SiH(CH{sub 3}){sub 3}] with nitrogen and argon. To realize the deposition of micrometer thick films with the aforementioned complex requirements at substrate temperatures {<=}200 deg. C, several plasma enhanced chemical vapor deposition methods were investigated: the capacitively coupled rf discharge and the microwave electron cyclotron resonance (ECR) plasma, combined with two types of pulsed substrate bias. SiCN:H films deposited at about 1 Pa from ECR plasmas with pulsed high-voltage bias best met the requirements. Pulsed biasing with pulse periods of about 1 {mu}s and amplitudes of about -2 kV was found to be most advantageous for the conformal low temperature coating of the microtrenches, thereby ensuring the required mechanical and insulating film properties.

OSTI ID:
21476416
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English