Deposition of high photo-conductivity a-Si:H film using ICPs without substrate heating
- Nagoya Univ. (Japan). Dept. of Electrical Engineering
- Matsushita Electric Industrial Co., Kyoto (Japan). Central Research Lab.
- Matsushita Technoresearch Inc., Moriguchi, Osaka (Japan)
Hydrogenated amorphous silicon (a-Si:H) films have been commonly prepared by glow discharge decomposition of silane (SiH{sub 4}) using capacitively coupled plasmas (CCP). In course of the film deposition with CCP, however, substrates must be heated at moderate temperatures around 250 C to obtain high quality films. This fact makes it impossible to deposit films on materials with no heat resistance such as polymer sheets. To break through this problem, a-Si:H deposition by ECR plasmas has been proposed. Inductively coupled plasmas (ICPs) are also very attractive for a-Si:H film deposition because high density plasmas at low pressures can be produced with compact and simple configurations compared with ECR discharges. The authors in this paper, demonstrate deposition of high photo-conductivity a-Si:H films at low substrate temperature, using a SiH{sub 4} ICP. Photo- and dark-conductivities are measured as a function of rf power, SiH{sub 4} pressure and substrate position with respect to the gas feed position. It is found that, at proper discharge conditions, high photo-conductivity films (10{sup {minus}6} {approximately} 10{sup {minus}5} {Omega}{sup {minus}1} cm{sup {minus}1}) can be deposited even at a substrate temperature of 40 C. This result is very promising for the a-Si:H deposition using ICP near room temperatures.
- OSTI ID:
- 423023
- Report Number(s):
- CONF-960634--
- Country of Publication:
- United States
- Language:
- English
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