Ion bombardment effects on undoped hydrogenated amorphous silicon films deposited by the electron cyclotron resonance plasma chemical vapor deposition method

Journal Article · Wed Jan 31 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345690· OSTI ID:7004308

Hayama, M; Murai, H; Kobayashi, K ^[1]

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1. Materials and Electronic Devices Laboratory, Mitsubishi Electric Company, Tsukaguchihonmachi 8-1-1, Amagasaki, Hyogo 661, Japan (JP)

Ion bombardment effects on undoped hydrogenated amorphous silicon films deposited by the electron cyclotron resonance plasma chemical vapor deposition method without substrate heating using SiH{sub 4}/Ar gas have been investigated by applying a dc bias voltage to the substrate. Ion bombardment to the growing films plays an important role in decreasing the polysilane phase and dangling bonds in the films, and in the realization of a high deposition rate. As a result, ion bombardment contributes to good photoconductivity at a high deposition rate, such as 170 nm/min, without substrate heating by decreasing the polysilane phase.

• OSTI ID: 7004308
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COLLISIONS
CYCLOTRON RESONANCE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
ION COLLISIONS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PLASMA
RADIATION EFFECTS
RESONANCE
SILANES
SILICON COMPOUNDS
SURFACE COATING