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Title: Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

Abstract

Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

Authors:
 [1]; ;  [2]; ;  [3]
  1. Department of Electro-Optical Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China)
  2. Department of Electrical Engineering, Institute of Microelectronic, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701 (China)
  3. Optoelectronics Semiconductor and System Application Division, Industrial Technology Research Institute, Hsin Chu, Taiwan 310 (China)
Publication Date:
OSTI Identifier:
21476087
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 107; Journal Issue: 1; Other Information: DOI: 10.1063/1.3276092; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ANNEALING; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; LIGHT SCATTERING; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SOLID CLUSTERS; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDES; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; METALS; MICROSCOPY; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; ZINC COMPOUNDS

Citation Formats

Lee, Hsin-Ying, Chou, Ying-Hung, Lee, Ching-Ting, Yeh, Wen-Yung, and Chu, Mu-Tao. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes. United States: N. p., 2010. Web. doi:10.1063/1.3276092.
Lee, Hsin-Ying, Chou, Ying-Hung, Lee, Ching-Ting, Yeh, Wen-Yung, & Chu, Mu-Tao. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes. United States. https://doi.org/10.1063/1.3276092
Lee, Hsin-Ying, Chou, Ying-Hung, Lee, Ching-Ting, Yeh, Wen-Yung, and Chu, Mu-Tao. 2010. "Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes". United States. https://doi.org/10.1063/1.3276092.
@article{osti_21476087,
title = {Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes},
author = {Lee, Hsin-Ying and Chou, Ying-Hung and Lee, Ching-Ting and Yeh, Wen-Yung and Chu, Mu-Tao},
abstractNote = {Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.},
doi = {10.1063/1.3276092},
url = {https://www.osti.gov/biblio/21476087}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 107,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2010},
month = {Fri Jan 15 00:00:00 EST 2010}
}