Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect

Journal Article · Tue Jun 30 04:00:00 EDT 2009 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2009V039N06ABEH013978· OSTI ID:21467114

Eliseev, P G; Ukhanov, A; Shtints, A; Malloy, K J ^[1]

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1. Centre for High-Technology Materials, University of New Mexico, Albuquerque (United States)

We present differential current-voltage characteristics of InGaAs/GaAs laser structures with InAs quantum dots in a quantum well and without dots. In both cases, there is a drop in differential resistance at the lasing threshold, but in the case of the quantum-dot laser the drop is incomplete, without saturation of the voltage applied to the nonlinear part of the diode. The observed current voltage behaviour is interpreted qualitatively in terms of series-connected barriers (series barriers model). (lasers)

• OSTI ID: 21467114
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 6 Vol. 39; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
NANOSTRUCTURES
NONLINEAR PROBLEMS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
QUANTUM WELLS