Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

Journal Article · Thu Aug 31 04:00:00 EDT 2000 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2000V030N08ABEH001787· OSTI ID:21442752

Eliseev, P G ^[1]; Li, H; Liu, G T; Stintz, A; Newell, T C; Lester, L E; Malloy, K J ^[2]

---

1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
2. Centre for High-Technology Materials, University of New Mexico, Albuquerque (United States)

The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold at room temperature was about 13 A cm{sup -2}. A theoretical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be {approx}7 x 10{sup -15} cm{sup -2}. (lasers)

• OSTI ID: 21442752
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 8 Vol. 30; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CROSS SECTIONS
CRYSTAL GROWTH METHODS
EPITAXY
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MATHEMATICAL MODELS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OPTICAL MODELS
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
QUANTUM DOTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K