Determination of optimum Si excess concentration in Er-doped Si-rich SiO{sub 2} for optical amplification at 1.54 {mu}m

Journal Article · Mon Nov 15 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3518476· OSTI ID:21464564

Savchyn, Oleksandr ^[1]; Coffey, Kevin R ^[2]; Kik, Pieter G ^[1]

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1. CREOL, College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States)
2. Advanced Materials Processing and Analysis Center (AMPAC), University of Central Florida, Orlando, Florida 32816 (United States)

The presence of indirect Er{sup 3+} excitation in Si-rich SiO{sub 2} is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er{sup 3+} ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be {approx}14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and {approx}11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 {mu}m in devices based on Er-doped Si-rich SiO{sub 2}.

• OSTI ID: 21464564
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
AMPLIFICATION
ANNEALING
CHALCOGENIDES
CHARGED PARTICLES
CONCENTRATION RATIO
DEACTIVATION
DENSITY
DEPOSITION
DIMENSIONLESS NUMBERS
DOPED MATERIALS
ELEMENTS
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
ERBIUM IONS
EXCITATION
EXCITED STATES
FILMS
GAIN
HEAT TREATMENTS
IONS
MATERIALS
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REAGENTS
SEMIMETALS
SENSITIZERS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
THIN FILMS