Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiO{sub x}

Journal Article · Sun May 01 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1894600· OSTI ID:20713939

Pi, X D; Zalloum, O H.Y.; Wojcik, J; Knights, A P; Mascher, P; Todd, A D.W.; Simpson, P J ^[1]

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1. Engineering Physics Department, McMaster University, Hamilton L8S 4L7 (Canada)

The mechanisms for the formation and oxidation of Si nanoclusters (Si-ncls) are elucidated by means of the study of their effects on the photoluminescence of Er in Er-doped Si-rich SiO{sub x} (x<2) films. We find that the light emission of Er is the most intense in films with a Si concentration of {approx}40% after annealing at 875 deg. C in an argon ambient, which yields an optimum Si-ncl size. The nucleation rate of Si-ncls increases with temperature, however, they stabilize around a critical size which increases with annealing temperature. We determine that the activation energy for the formation of Si-ncls is 1.4{+-}0.5 eV. During annealing in an oxygen ambient Si-ncls are oxidized. The resultant oxide reduces the efficiency of energy transfer from them to Er ions and thus the light emission of Er. The activation energy for the oxidation is 1.06{+-}0.03 eV.

• OSTI ID: 20713939
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANNEALING
ARGON
CHEMICAL VAPOR DEPOSITION
COATINGS
CRITICAL SIZE
DOPED MATERIALS
ENERGY TRANSFER
ERBIUM IONS
EV RANGE 01-10
NANOSTRUCTURES
OXIDATION
OXYGEN
PHOTOLUMINESCENCE
PLASMA
SILICON OXIDES
TEMPERATURE RANGE 1000-4000 K
THIN FILMS