Er site in Er-implanted Si nanoclusters embedded in SiO{sub 2}

Journal Article · Wed Nov 15 04:00:00 EST 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.74.205428· OSTI ID:20853897

Maurizio, C; D'Acapito, F ^[1]; Iacona, F ^[2]; Franzo, G; Priolo, F ^[3]

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1. INFM-CNR, OGG-European Synchrotron Radiation Facility, GILDA-CRG, Boite Postal 220, F-38043 Grenoble (France)
2. CNR-IMM, Sezione di Catania, stradale Primosole 50, I-95121 Catania (Italy)
3. MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, via Santa Sofia 64, I-95123 Catania (Italy)

We have investigated by extended x-ray absorption fine structure spectroscopy the local order around Er atoms introduced by ion implantation in substoichiometric silica films prepared by plasma enhanced chemical vapor deposition, where Si nanoclusters have been formed by different preimplantation annealing processes. The results show that Er atoms are surrounded by a first shell of O atoms and no Er-Si direct correlations are observed; moreover, while the variation of the preimplantation annealing temperature has no effect on the Er site, it is observed that the increase of the Er concentration determines an increase of both the Er first shell coordination number and the Er-O interatomic distance, becoming more similar to those of Er{sub 2}O{sub 3}. In the presence of an extensive phase separation between Si and SiO{sub 2} the local environment around Er plays a crucial role on the efficiency of the photoluminescence emission at 1.54 {mu}m, which is significantly increased when the first shell of atoms around Er is closer to that one of Er{sub 2}O{sub 3}.

• OSTI ID: 20853897
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 20 Vol. 74; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ANNEALING
ATOMS
CHEMICAL VAPOR DEPOSITION
COORDINATION NUMBER
CORRELATIONS
ERBIUM
ERBIUM OXIDES
FINE STRUCTURE
INTERATOMIC DISTANCES
ION IMPLANTATION
NANOSTRUCTURES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
THIN FILMS
VARIATIONS
X-RAY SPECTROSCOPY