The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering

Journal Article · Mon Nov 08 04:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1819514· OSTI ID:20634408

Heng, C L; Finstad, T G; Storaas, P; Li, Y J; Gunnaes, A E; Nilsen, O ^[1]

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1. Department of Physics, University of Oslo, N-0316 Oslo (Norway)

In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The PL intensity reaches a maximum value after the film is annealed at 700 deg. C for 30 min in N{sub 2}. High-resolution transmission electron microscopy observation, together with energy dispersive x-ray spectroscopy analysis, indicates that amorphous Ge-rich nanoclusters precipitate in the film after 700 deg. C annealing. X-ray diffraction shows the presence of Ge nanocrystals after 900 deg. C annealing, and increasing Ge nanocrystal size with increasing annealing temperature up to 1100 deg. C. The results suggest that the amorphous Ge-rich nanoclusters are more effective than Ge nanocrystals in exciting the Er{sup 3+} PL.

• OSTI ID: 20634408
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
DEPOSITION
DOPED MATERIALS
ERBIUM IONS
GERMANIUM IONS
MAGNETRONS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SILICON OXIDES
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY