Structural and resistance switching properties of ZnO/SrTiO{sub 3}/GaAs heterostructure grown by laser molecular beam epitaxy

Journal Article · Mon Oct 18 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3505136· OSTI ID:21464526

Huang, W ^[1]; Dai, J Y; Hao, J H ^[1]

---

1. Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University (Hong Kong)

ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO{sub 3} (STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.

• OSTI ID: 21464526
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALKALINE EARTH METAL COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HYSTERESIS
INTERFACES
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
STRONTIUM COMPOUNDS
STRONTIUM TITANATES
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
ZINC OXIDES