Structural and dielectric properties of epitaxial SrTiO{sub 3} films grown directly on GaAs substrates by laser molecular beam epitaxy

Journal Article · Mon Sep 01 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2974796· OSTI ID:21182604

Wu, Z P; Huang, W; Wong, K H; Hao, J H ^[1]

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1. Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong (China)

Epitaxial SrTiO{sub 3} films were grown on GaAs (001) substrates without any buffer layers using laser molecular beam epitaxy technique. The reflection high-energy electron diffraction observations have revealed that a layer-by-layer growth of SrTiO{sub 3} was achieved at optimized deposition conditions. The crystalline orientation of the as-grown SrTiO{sub 3} (001) films rotates 45 deg. in plane with respect to the GaAs substrates. Atomic force microscope studies show that these films possess atomically flat surfaces. The dielectric properties of the heterostructure were also investigated. Our results have clearly demonstrated the practicality of integrating perovskite oxide thin films with GaAs substrates.

• OSTI ID: 21182604
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DEPOSITION
ELECTRON DIFFRACTION
FERROELECTRIC MATERIALS
GALLIUM ARSENIDES
GRAIN ORIENTATION
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
OXIDES
PERMITTIVITY
PEROVSKITE
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS