Optical loss in strained quantum-well semiconductor ridge lasers

Journal Article · Tue Oct 31 04:00:00 EST 2000 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2000V030N10ABEH001826· OSTI ID:21440430

Bogatov, Alexandr P; Drakin, A E ^[1]; Boltaseva, A E ^[2]; Konyaev, V P ^[3]

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1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation)
3. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

The results of measurements of optical loss in semiconductor ridge lasers are presented. The InGaAs/AlGaAs/GaAs single-quantum-well semiconductor lasers are studied in the spectral range from 1019 to 1042 nm, which corresponds to the long wavelength wing of the mode gain curve. It is shown that the dominant mechanism of optical loss appears to be light scattering by optical inhomogeneities of the laser waveguide, while the free-carrier absorption is negligible in the lasers studied. (lasers)

• OSTI ID: 21440430
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 10 Vol. 30; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LIGHT SCATTERING
LOSSES
NANOSTRUCTURES
OPTICS
PNICTIDES
QUANTUM WELLS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SORPTION
WAVEGUIDES
WAVELENGTHS