Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 {mu}m and a reduced divergence in the plane perpendicular to the p - n junction

Journal Article · Fri Apr 30 00:00:00 EDT 1999 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE1999V029N04ABEH001470· OSTI ID:21439473

Bezotosnyi, V V ^[1]; Davydova, Evgeniya I; Zalevskii, I D; Marmalyuk, Aleksandr A; Padalitsa, A A ^[2]; Konyaev, V P ^[3]; Shishkin, Viktor A ^[4]

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1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
2. 'Sigm Plyus', Moscow (Russian Federation)
3. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)
4. Nolatekh Co. Ltd, Scientific-Research Institute 'Polyus' (State Enterprise), Moscow (Russian Federation)

Strained double-sided AlGaAs/InGaAs/GaAs heterostructures emitting at a wavelength of 1.06 {mu}m, with separate optical and electrical confinement, and containing two quantum wells, were developed. CW lasers with a stripe contact of 100 {mu}m width having an output power up to 2 W and 20{sup 0} - 25{sup 0} divergence of the radiation in the plane perpendicular to the p - n junction were constructed from these heterostructures. The external differential quantum efficiency was 85% and the overall efficiency was 47% at the casing temperature of 20{sup 0}C. The efficiency of coupling the radiation into a standard fibre waveguide, with a core diameter of 50 {mu}m and a numerical aperture of 0.22, was 80%. (letters to the editor)

• OSTI ID: 21439473
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 29, Issue 4; Other Information: DOI: 10.1070/QE1999v029n04ABEH001470; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
APERTURES
CONFINEMENT
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
P-N JUNCTIONS
QUANTUM EFFICIENCY
QUANTUM WELLS
WAVEGUIDES
WAVELENGTHS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
NANOSTRUCTURES
OPENINGS
PNICTIDES
SEMICONDUCTOR JUNCTIONS