High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 {mu}m

Journal Article · Mon Aug 31 00:00:00 EDT 2009 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2009V039N08ABEH014181· OSTI ID:21471110

Davydova, Evgeniya I; Zverkov, M V; Konyaev, V P; Krichevskii, V V; Ladugin, M A; Marmalyuk, Aleksandr A; Padalitsa, A A; Simakov, V A; Sukharev, A V; Uspenskii, Mikhail B ^[1]

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1. M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

Ternary vertically integrated lasers based on the InGaAs/AlGaAs/GaAs heterostructure grown by the method of MOS hydride epitaxy in a single epitaxial process are studied. The typical slope of the watt-ampere characteristic for a triple laser diode is 2.6 W A{sup -1}. The frequency characteristics and temperature dependences of the optical power on the pump power demonstrate good homogeneity of the grown structures. Laser diodes based on the triple laser heterostructure (the stripe contact width is 200 {mu}m and the cavity length is 1 mm) emit 80 W at 0.9 {mu}m in the pulsed regime at the injection current of 40 A. (lasers)

• OSTI ID: 21471110
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 8 Vol. 39; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CURRENTS
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
IRRADIATION
LASER CAVITIES
LASERS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PNICTIDES
PULSED IRRADIATION
SILICON COMPOUNDS
SILICON OXIDES