Formation of ohmic contacts with SiC by laser ablation

Journal Article · Mon Aug 31 04:00:00 EDT 1998 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE1998V028N08ABEH001303· OSTI ID:21437796

Vlasov, I I; Lyalin, A A; Obraztsova, Elena D; Simakin, Aleksandr V; Shafeev, Georgii A ^[1]

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1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

A description is given of a new method for the formation of an ohmic contact with silicon carbide (SiC) single crystals, based on laser ablation of the crystal surface. It was found that regions of SiC ablated in air or in vacuum by copper vapour laser radiation (wavelength 510.6 nm, pulse duration 10 ns) become capable of reducing metals (Cu or Ni) from suitable solutions intended for autocatalytic deposition. The Raman spectra of the ablated regions demonstrate the presence of Si nanoclusters of 10-20 nm size, which are one of the reasons for chemical reduction of the metal. The deposited metal forms an ohmic contact with n-type SiC without additional annealing and the specific contact resistance depends weakly on the nature of the metal, amounting to 2.3 and 2.1 m{Omega} cm{sup 2} for Cu and Ni, respectively. The mechanisms of ohmic contact formation by laser ablation are discussed. (interaction of laser radiation with matter)

• OSTI ID: 21437796
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 8 Vol. 28; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABLATION
ANNEALING
CARBIDES
CARBON COMPOUNDS
CATALYSTS
COPPER
CRYSTALS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
LASER RADIATION
METALS
MONOCRYSTALS
NANOSTRUCTURES
PULSES
RADIATIONS
RAMAN SPECTRA
SILICON CARBIDES
SILICON COMPOUNDS
SPECTRA
SURFACES
TRANSITION ELEMENTS
WAVELENGTHS