Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

Journal Article · Wed Jul 07 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3469610· OSTI ID:21431089

Mahyuddin, A; Hassan, Z; Yusof, Y ^[1]; Cheong, K Y ^[2]

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1. Nano-Opoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
2. School of Materials and Mineral Resources Engineering, USM Engineering Campus, Seri Ampangan, 14300 Seberang Prai Selatan, Penang (Malaysia)

In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.

• OSTI ID: 21431089
• Journal Information: AIP Conference Proceedings, Vol. 1250, Issue 1; Conference: PERFIK2009: National physics conference 2009, Malacca (Malaysia), 7-9 Dec 2009; Other Information: DOI: 10.1063/1.3469610; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
BEAMS
CAPACITANCE
CHARGE DENSITY
DENSITY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
FILMS
GALLIUM NITRIDES
INTERFACES
LAYERS
METALS
MIS SOLAR CELLS
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
OXIDES
PLASMA
RESOLUTION
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT