Acceptor Type Vacancy Complexes In As-Grown ZnO

Journal Article · Mon Nov 01 04:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3518301· OSTI ID:21428735

Zubiaga, A; Tuomisto, F ^[1]; Zuniga-Perez, J ^[2]

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1. Department of Applied Physics, Aalto University, P.O. Box 11100, Fin-00076 Aalto, Espoo (Finland)
2. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap ({approx}3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li{sub Zn} and Na{sub Zn} acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

• OSTI ID: 21428735
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1292; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DOPED MATERIALS
DOPPLER BROADENING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
ELEMENTARY PARTICLES
ENERGY RANGE
EPITAXY
EV RANGE
FERMIONS
FILMS
GAMMA SPECTROSCOPY
INTERACTIONS
ION IMPLANTATION
LEPTONS
LINE BROADENING
MATERIALS
MATTER
MOLECULAR BEAM EPITAXY
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
PHYSICAL PROPERTIES
POINT DEFECTS
POSITRONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THIN FILMS
VACANCIES
ZINC COMPOUNDS
ZINC OXIDES