Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO

Parmar, Narendra S.; Choil, Ji-Won; Boatner, Lynn A.; McCluskey, M. D.; Lynn, Kelvin G.

doi:10.1016/j.jallcom.2017.09.239

Title: Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO

Journal Article · Fri Sep 22 00:00:00 EDT 2017 · Journal of Alloys and Compounds

DOI:https://doi.org/10.1016/j.jallcom.2017.09.239· OSTI ID:1797694

Parmar, Narendra S. ^[1]; Choil, Ji-Won ^[2];

^[3]; McCluskey, M. D. ^[4]; Lynn, Kelvin G. ^[5]

Korean Institute of Science and Technology Information (KISTI), Seoul (Korea, Republic of). Center for Electronic Materials
Korean Institute of Science and Technology Information (KISTI), Seoul (Korea, Republic of). Center for Electronic Materials; Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Washington State Univ., Pullman, WA (United States)
Washington State Univ., Pullman, WA (United States). Center for Materials Research

Here, research is described here that is directed toward obtaining p-type ZnO crystals either by doping or by creating native defects. Theoretically, zinc vacancies are shallow acceptors that should allow for p-type conduction. Bulk ZnO crystals can be grown by chemical vapor transport (CVT), melt solidification, and hydrothermal methods. Here we have explored annealing processes with the goal of creating zinc vacancies in bulk ZnO crystals. Positron annihilation spectra reveal the reproducible formation of high concentrations (>10²⁰ cm^–3) of isolated zinc vacancies (V_Zn) in oxygen-annealed, CVT-grown ZnO crystals in the ~100–150 nm near-surface. Melt- and hydrothermally grown samples, in contrast, show insignificant levels of zinc vacancy creation. Photoluminescence (PL) emission spectra indicate a V_Zn(0/-1) acceptor level at ~ 155–165 meV; red PL (~1.7 eV) emission, related to the V_Zn(-1/-2) level, was also observed. Infrared absorption spectroscopy reveals the presence of a zinc vacancy complex with a hole binding energy range of 420–450 meV – and with a continuum suggesting a p-type region. XPS measurements support the deficiency of Zn after oxygen annealing the CVT-grown ZnO single crystal.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Research Foundation of Korea (NRF); USDOE

Grant/Contract Number:: AC05-00OR22725; FG02-07ER46386

OSTI ID:: 1797694

Alternate ID(s):: OSTI ID: 1489144; OSTI ID: 1495832

Journal Information:: Journal of Alloys and Compounds, Vol. 729; ISSN 0925-8388

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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