Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

Journal Article · Thu Mar 11 04:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3377874· OSTI ID:21371693

Munir, T; Aziz, A A; Abdullah, M J ^[1]; Ain, M F ^[2]

---

1. Nano-Optoelectronics Research Laboratory (NOR), School of Physics Universiti Sains Malaysia 11800 Minden Penang Malaysia, 14300 Nibong Tebal, Penang (Malaysia)
2. Nano-Optoelectronics Research Laboratory (NOR), School of Electrical and Electronics Engineering Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)

Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

• OSTI ID: 21371693
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1217; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LAYERS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHYSICAL PROPERTIES
PLATES
PNICTIDES
RELIABILITY
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
THIN FILMS