Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

Rahman, Mohammad Wahidur; Chandrasekar, Hareesh; Razzak, Towhidur; Lee, Hyunsoo; Rajan, Siddharth

doi:10.1063/5.0055946

Hybrid BaTiO₃/SiN_x/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

Journal Article · Tue Jul 06 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0055946· OSTI ID:1850407

^[1]; ^[2]; ^[2]; ^[2]; Rajan, Siddharth ^[3]

The Ohio State University, Columbus, OH (United States). Department of Electrical and Computer Engineering; Ohio State Univ., Columbus, OH (United States)
The Ohio State University, Columbus, OH (United States). Department of Electrical and Computer Engineering
The Ohio State University, Columbus, OH (United States). Department of Electrical and Computer Engineering; The Ohio State University, Columbus, OH (United States). Department of Material Science and Engineering

In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN_x/AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003921

OSTI ID:: 1850407

Alternate ID(s):: OSTI ID: 1805304

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 119; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (40)

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates Chandrasekar, Hareesh; Razzak, Towhidur; Wang, Caiyu Advanced Electronic Materials, Vol. 6, Issue 8 https://doi.org/10.1002/aelm.202000074	journal	July 2020
The DC characteristics of anisotype heterojunction in the presence of interface states and series resistance Chattopadhyay, P.; Haldar, D. P. Applied Surface Science, Vol. 143, Issue 1-4 https://doi.org/10.1016/S0169-4332(98)00907-6	journal	April 1999
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures Zeyrek, S.; Altındal, Ş.; Yüzer, H. Applied Surface Science, Vol. 252, Issue 8 https://doi.org/10.1016/j.apsusc.2005.05.008	journal	February 2006
Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage Hsueh, Kuang-Po; Chang, Yi-Sheng; Li, Bo-Hong Materials Science in Semiconductor Processing, Vol. 90 https://doi.org/10.1016/j.mssp.2018.10.013	journal	February 2019
Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness Kordoš, P.; Gregušová, D.; Stoklas, R. Solid-State Electronics, Vol. 52, Issue 6 https://doi.org/10.1016/j.sse.2008.01.028	journal	June 2008
Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode Chang, Ting-Fu; Huang, Chih-Fang; Yang, Tsung-Yu Solid-State Electronics, Vol. 105 https://doi.org/10.1016/j.sse.2014.11.024	journal	March 2015
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure Xu, Ru; Chen, Peng; Liu, Menghan Solid-State Electronics, Vol. 175 https://doi.org/10.1016/j.sse.2020.107953	journal	January 2021
High voltage (450 V) GaN Schottky rectifiers Bandić, Z. Z.; Bridger, P. M.; Piquette, E. C. Applied Physics Letters, Vol. 74, Issue 9 https://doi.org/10.1063/1.123520	journal	March 1999
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric Ye, P. D.; Yang, B.; Ng, K. K. Applied Physics Letters, Vol. 86, Issue 6 https://doi.org/10.1063/1.1861122	journal	February 2005
High performance AlGaN/GaN power switch with HfO2 insulation Shi, Junxia; Eastman, Lester F.; Xin, Xiaobin Applied Physics Letters, Vol. 95, Issue 4 https://doi.org/10.1063/1.3190506	journal	July 2009
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Ambacher, O.; Smart, J.; Shealy, J. R. Journal of Applied Physics, Vol. 85, Issue 6 https://doi.org/10.1063/1.369664	journal	March 1999
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current Ma, Jun; Matioli, Elison Applied Physics Letters, Vol. 112, Issue 5 https://doi.org/10.1063/1.5012866	journal	January 2018
BaTiO ₃ /Al _0.58 Ga _0.42 N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Razzak, Towhidur; Chandrasekar, Hareesh; Hussain, Kamal Applied Physics Letters, Vol. 116, Issue 2 https://doi.org/10.1063/1.5130590	journal	January 2020
Metal/BaTiO ₃ /β-Ga ₂ O ₃ dielectric heterojunction diode with 5.7 MV/cm breakdown field Xia, Zhanbo; Chandrasekar, Hareesh; Moore, Wyatt Applied Physics Letters, Vol. 115, Issue 25 https://doi.org/10.1063/1.5130669	journal	December 2019
Band structure and optical properties of tetragonal BaTiO ₃ Michel-Calendini, F. M.; Mesnard, G. Journal of Physics C: Solid State Physics, Vol. 6, Issue 10 https://doi.org/10.1088/0022-3719/6/10/007	journal	May 1973
GaN Power Transistors on Si Substrates for Switching Applications Ikeda, Nariaki; Niiyama, Yuki; Kambayashi, Hiroshi Proceedings of the IEEE, Vol. 98, Issue 7 https://doi.org/10.1109/JPROC.2009.2034397	journal	July 2010
High-power AlGaN/GaN HEMTs for Ka-band applications Palacios, T.; Chakraborty, A.; Rajan, S. IEEE Electron Device Letters, Vol. 26, Issue 11, p. 781-783 https://doi.org/10.1109/LED.2005.857701	journal	November 2005
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications Saadat, O. I.; Chung, J. W.; Piner, E. L. IEEE Electron Device Letters, Vol. 30, Issue 12 https://doi.org/10.1109/LED.2009.2032938	journal	December 2009
Planar Nearly Ideal Edge-Termination Technique for GaN Devices Ozbek, A. Merve; Baliga, B. Jayant IEEE Electron Device Letters, Vol. 32, Issue 3 https://doi.org/10.1109/LED.2010.2095825	journal	March 2011
Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates Chu, Mu-Tao; Liao, Wen-Yih; Horng, Ray-Hua IEEE Electron Device Letters, Vol. 32, Issue 7 https://doi.org/10.1109/LED.2011.2144954	journal	July 2011
High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer Lee, Geng-Yen; Liu, Hsueh-Hsing; Chyi, Jen-Inn IEEE Electron Device Letters, Vol. 32, Issue 11 https://doi.org/10.1109/LED.2011.2164610	journal	November 2011
Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking Bahat-Treidel, E.; Hilt, Oliver; Zhytnytska, Rimma IEEE Electron Device Letters, Vol. 33, Issue 3 https://doi.org/10.1109/LED.2011.2179281	journal	March 2012
Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode Lee, Jae-Gil; Park, Bong-Ryeol; Cho, Chun-Hyung IEEE Electron Device Letters, Vol. 34, Issue 2 https://doi.org/10.1109/LED.2012.2235403	journal	February 2013
AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking Lian, Yi-Wei; Lin, Yu-Syuan; Yang, Jui-Ming IEEE Electron Device Letters, Vol. 34, Issue 8 https://doi.org/10.1109/LED.2013.2269475	journal	August 2013
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon Zhu, Mingda; Song, Bo; Qi, Meng IEEE Electron Device Letters, Vol. 36, Issue 4 https://doi.org/10.1109/LED.2015.2404309	journal	April 2015
High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode Zhou, Qi; Jin, Yang; Shi, Yuanyuan IEEE Electron Device Letters, Vol. 36, Issue 7 https://doi.org/10.1109/LED.2015.2432171	journal	July 2015
0.34 $\text{V}_{\mathrm {T}}$ AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal Lee, Hyun-Soo; Jung, Dong Yun; Park, Youngrak IEEE Electron Device Letters, Vol. 36, Issue 11 https://doi.org/10.1109/LED.2015.2475178	journal	November 2015
2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit Tsou, Chuan-Wei; Wei, Kai-Pin; Lian, Yi-Wei IEEE Electron Device Letters, Vol. 37, Issue 1 https://doi.org/10.1109/LED.2015.2499267	journal	January 2016
Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si ₃ N ₄ Compatible Self-Terminated, Low Damage Anode Recess Technology Gao, Jingnan; Jin, Yufeng; Xie, Bing IEEE Electron Device Letters, Vol. 39, Issue 6 https://doi.org/10.1109/LED.2018.2830998	journal	June 2018
A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V Zhang, Tao; Zhang, Jincheng; Zhou, Hong IEEE Electron Device Letters https://doi.org/10.1109/LED.2018.2864874	journal	January 2018
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN _x Passivation Sohel, Shahadat H.; Rahman, Mohammad Wahidur; Xie, Andy IEEE Electron Device Letters, Vol. 41, Issue 1 https://doi.org/10.1109/LED.2019.2951655	journal	January 2020
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure Xu, Ru; Chen, Peng; Liu, Menghan IEEE Electron Device Letters, Vol. 42, Issue 2 https://doi.org/10.1109/LED.2020.3049086	journal	February 2021
Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications Kuzuhara, Masaaki; Tokuda, Hirokuni IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2359055	journal	February 2015
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination Hu, Jie; Stoffels, Steve; Lenci, Silvia IEEE Transactions on Electron Devices, Vol. 63, Issue 9 https://doi.org/10.1109/TED.2016.2587103	journal	September 2016
Design of Transistors Using High-Permittivity Materials Xia, Zhanbo; Wang, Caiyu; Kalarickal, Nidhin Kurian IEEE Transactions on Electron Devices, Vol. 66, Issue 2 https://doi.org/10.1109/TED.2018.2888834	journal	February 2019
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors Kalarickal, Nidhin Kurian; Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M. IEEE Transactions on Electron Devices, Vol. 68, Issue 1 https://doi.org/10.1109/TED.2020.3037271	journal	January 2021
Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High- k Passivation Layer Tomita, R.; Ueda, S.; Kawada, T. IEEE Transactions on Electron Devices, Vol. 68, Issue 4 https://doi.org/10.1109/TED.2021.3060353	journal	April 2021
Nanoscale etching of perovskite oxides for field effect transistor applications Cheng, Junao; Yang, Hao; Wang, Caiyu Journal of Vacuum Science & Technology B, Vol. 38, Issue 1 https://doi.org/10.1116/1.5122667	journal	January 2020
Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity Lu, Yu; Zhou, Feng; Xu, Weizong Applied Physics Express, Vol. 13, Issue 9 https://doi.org/10.35848/1882-0786/abaf0e	journal	August 2020
High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm ⁻² Zhang, Tao; Zhang, Jincheng; Zhou, Hong Applied Physics Express, Vol. 12, Issue 4 https://doi.org/10.7567/1882-0786/ab0712	journal	March 2019

Similar Records

Integration of high permittivity BaTiO₃ with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Journal Article · Sun Nov 07 23:00:00 EST 2021 · Applied Physics Letters · OSTI ID:1978976

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Journal Article · Sun Feb 15 23:00:00 EST 2015 · IEEE Electron Device Letters · OSTI ID:1170275

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Chemical vapor deposition
Dielectric materials
Heterostructures
High mobility electron gas
High voltage diodes
Nitrides
Perovskites
Physics
Schottky barrier diode
Schottky diodes
Semiconductors

Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

Citation Formats

References (40)

Similar Records

Related Subjects

Hybrid BaTiO₃/SiN_x/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance