Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Rahman, Mohammad Wahidur; Kalarickal, Nidhin Kurian; Lee, Hyunsoo; Razzak, Towhidur; Rajan, Siddharth

doi:10.1063/5.0070665

Integration of high permittivity BaTiO₃ with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Journal Article · Sun Nov 07 23:00:00 EST 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0070665· OSTI ID:1978976

^[1]; ^[2]; ^[2]; ^[2]; Rajan, Siddharth ^[2]

The Ohio State University, Columbus, OH (United States); The Ohio State Univ., Columbus, OH (United States)
The Ohio State University, Columbus, OH (United States)

In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO₃ dielectric to enable enhanced breakdown characteristics. We show that using high permittivity BaTiO₃ dielectric layers in the gate and drain access regions prevents premature gate breakdown, leading to average breakdown fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 μm. The higher breakdown fields enable a high power figure of merit above 2.4 GW/cm² in devices with a gate-to-drain spacing of 6 μm. This work demonstrates that electrostatic engineering using high-permittivity dielectrics can enable AlGaN/GaN HEMTs in approaching the material breakdown field limits.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States); The Ohio State University, Columbus, OH (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: NA0003921

OSTI ID:: 1978976

Alternate ID(s):: OSTI ID: 1829326

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 119; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

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Integration of high permittivity BaTiO₃ with AlGaN/GaN for near-theoretical breakdown field kV-class transistors