Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal

Journal Article · Mon Jul 26 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3467853· OSTI ID:21367029

Urbanczyk, A; Hamhuis, G J; Noetzel, R ^[1]

---

1. Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QDs.

• OSTI ID: 21367029
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
QUANTUM DOTS
RESONANCE
SEMICONDUCTOR MATERIALS