Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3358122· OSTI ID:21347322

Urbanczyk, A; Hamhuis, G J; Noetzel, R ^[1]

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1. Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.

• OSTI ID: 21347322
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
EMISSION SPECTRA
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PLASMONS
PNICTIDES
QUANTUM DOTS
QUASI PARTICLES
SEMICONDUCTOR MATERIALS
SPECTRA
STRAINS