Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics

Journal Article · Mon Jun 13 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3596460· OSTI ID:21518487

Urbanczyk, Adam; Otten, Frank W. M. van; Noetzel, Richard ^[1]

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1. Department of Applied Physics, COBRA Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelength of the QDs. Photoluminescence measurements of such hybrid metal-semiconductor nanostructures reveal large enhancement of the emission intensity. Our concept of epitaxial self-alignment enables the integration of plasmonic functionality with electronic and photonic semiconductor devices operating down to the single QD level.

• OSTI ID: 21518487
• Journal Information: Applied Physics Letters, Vol. 98, Issue 24; Other Information: DOI: 10.1063/1.3596460; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DENSITY
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILVER
SURFACES
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
METALS
NANOSTRUCTURES
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
TRANSITION ELEMENTS