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Title: X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3253748· OSTI ID:21361908
; ; ;  [1];  [2]
  1. Department of Physics, University of Bologna, viale Berti Pichat 6/2, Bologna 40127 (Italy)
  2. EURORAD24 rue du Pont, Chennevieres/Marne 94430 (France)

CdZnTe-based detectors possess unique properties as room-temperature x- and gamma-ray detectors. We report on the effects of x-ray irradiation on CdZnTe and CdTe:Cl detectors with increasing x-ray doses. We correlate the 'macroscopic' performance of the detectors, investigated by gamma-ray spectroscopy to the 'microscopic' effects induced by the impinging radiation, i.e., the defective states introduced in the crystal lattice. The electrical activity of the defects and their activation energy have been investigated by photo induced current transient spectroscopy and by space charge limited current analyses. We identify the x-ray dose that induces a significant degradation in the detector performance, and by cross-correlating the results obtained, we achieve a reliable estimate of the actual concentration of electrically active deep states and assess the potentiality of these experimental methods as tools for quantitative analyses of high resistivity materials.

OSTI ID:
21361908
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 9; Other Information: DOI: 10.1063/1.3253748; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English