Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Journal Article · Mon Mar 22 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3367746· OSTI ID:21347327

Plissard, S; Wallart, X; Caroff, P ^[1]; Dick, K A ^[2]

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1. Institut d'Electronique, de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincare, B.P. 60069, 59652 Villeneuve d'Ascq (France)
2. Solid State Physics, Lund University, Box 118, S-22100 Lund (Sweden)

Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAs{sub x}Sb{sub 1-x} segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an Al{sub x}Ga{sub 1-x}As shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

• OSTI ID: 21347327
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
HETEROJUNCTIONS
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PNICTIDES
QUANTUM WIRES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
STACKING FAULTS
TRANSITION ELEMENTS