Compositional and Structural Study of Gd Implanted ZnO Films

Journal Article · Thu Jul 23 04:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3203234· OSTI ID:21344294

Murmu, Peter P ^[1]; Kennedy, John V; Markwitz, Andreas ^[1]; Ruck, Ben J ^[2]

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1. MacDiarmid Institute for Advanced Materials and Nanotechnology, P.O. 600, Wellington (New Zealand)
2. School of Chemical and Physical Sciences Victoria, University of Wellington (New Zealand)

We report a compositional and structural study of ZnO films implanted with 30 keV Gd ions. The depth profile of the implanted ions, measured by Rutherford backscattering spectrometry, matches predictions of DYNAMIC-TRIM calculations. However, after annealing at temperatures above 550 deg. C the Gd ions are observed to migrate towards the bulk, and at the same time atomic force microscope images of the film surfaces show significant roughening. Raman spectroscopy shows that the annealed films have a reduced number of crystalline defects. The overall results are useful for developing an implantation-annealing regime to produce well characterized samples to investigate magnetism in the ZnO:Gd system.

• OSTI ID: 21344294
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1151; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMIC FORCE MICROSCOPY
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ENERGY RANGE
FILMS
GADOLINIUM IONS
HEAT TREATMENTS
IMAGES
ION IMPLANTATION
IONS
KEV RANGE
LASER SPECTROSCOPY
MAGNETISM
MATERIALS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
SURFACES
ZINC COMPOUNDS
ZINC OXIDES