The correlation between electron density and anchoring strength in the inorganic vertical alignment layer

Journal Article · Mon Aug 24 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3211117· OSTI ID:21294283

Hwang, Byoung Har; Yoo, Young Bum; Oh, Jin Young; Chae, Soo Sang; Baik, Hong Koo ^[1]; Lee, Se Jong ^[2]; Song, Kie Moon ^[3]

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1. Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of)
2. Department of Materials Science and Engineering, Kyungsung University, 110-1 Daeyon-Dong, Nam-Gu, Busan 608-736 (Korea, Republic of)
3. Department of Applied Physics, Konkuk University, 322 Danwol-Dong, Chungju-Si, Chungcheongbuk-Do 380-701 (Korea, Republic of)

The relationship between the liquid crystal (LC) alignment and the density of the silicon oxide alignment layer was studied by theoretical and experimental approaches. The thin films were deposited by various methods and conditions, and then their densities were analyzed by x-ray reflectivity measurement. The alignment of LC was highly dependent on their densities, which we found to be closely related to the number of interacting dipoles. Ultimately, a-SiO{sub x} thin film with lower density gives rise to the uniform vertical alignment of liquid crystal.

• OSTI ID: 21294283
• Journal Information: Applied Physics Letters, Vol. 95, Issue 8; Other Information: DOI: 10.1063/1.3211117; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
ELECTRON DENSITY
LAYERS
LIQUID CRYSTALS
REFLECTIVITY
SILICON OXIDES
SPUTTERING
THIN FILMS